Method for improving transistor performance

ABSTRACT

A method to improve transistor performance uses a wafer ( 100 ) of single-crystalline semiconductor with a first zone ( 102 ) of field effect transistors (FETs) and circuitry at the wafer surface, and an infrared (IR) laser with a lens for focusing the IR light to a second depth ( 112 ) farther from the wafer surface than the first depth of the first zone. The focused laser beam is moved parallel to the surface across the wafer to cause local multi-photon absorption at the second depth for transforming the single-crystalline semiconductor into a second zone ( 111 ) of polycrystalline semiconductor with high density of dislocations. The second zone has a height and lateral extensions, and permanently stresses the single-crystalline bulk semiconductor; the stress increases the majority carrier mobility in the channel of the FETs, improving the transistor performance.

This application is a continuation of U.S. patent application Ser. No.15/136,097, filed Apr. 22, 2016, the contents of all which are hereinincorporated by reference in its entirety.

FIELD

Embodiments of the invention are related in general to the field ofsemiconductor devices and processes, and more specifically to thestructure and fabrication method of creating intrinsic semiconductorlattice strain to increase carrier mobility and enhance field effecttransistor performance.

DESCRIPTION OF RELATED ART

When a body of a semiconductor such as silicon is in contact withanother solid state material, stress in the semiconductor may usually becaused by one of two situations: Stress may be caused by a mismatch ofthe coefficients of thermal expansion (CTE) between the two materials,or stress may be caused by differences of the lattice constants of thetwo bodies.

It is known that mechanical stress, when applied to a semiconductorlattice, leads to splitting of the conduction band and thus alters theeffective mass of the majority carrier, leading to changes of thecarrier mobility. For nMOS field effect transistors (FETs) withelectrons as majority carriers, tensile stress to the channel latticeenhances the electron mobility in the channel. For pMOS FETs with holesas majority carriers, compressive stress to the channel lattice enhancesthe hole mobility in the channel. In both examples, the improvement ofthe carrier mobility leads to a decrease of the on-resistance betweendrain and source (R_(DSon)) and thus to improved FET efficiency. Onefrequently practiced technique to achieve such improved FET performanceis the deposition of tensile silicon nitride layers on nMOS transistors,and compressive silicon nitride layers in pMOS transistors.

The effect that localized stress near the channel of a field effecttransistor can result in improved electrical performance has been put topractice in the last few years by the production of semiconductordevices having a need for through-silicon vias (TSVs). The fabricationof TSVs starts while the device chips are still in un-thinned waferform. A plurality of holes distributed across each chip area in thedesired pattern is etched with uniform diameter and to a certain depth.The etching may be performed by chemical etching or be focused laserlight. Then, a dielectric compound such as silicon nitride or silicondioxide is deposited on the TSV sidewalls in order to create a thininsulating layer between the semiconductor material and the intendedconductive layers inside the TSV. Next, a metal seed layer (such astantalum nitride or a refractory metal) is deposited on the insulatinglayer, followed by the deposition of the thicker metal filling(preferably copper). Thereafter, the wafer is thinned, by grinding oretching or both, until the bottom of the via holes are exposed and theTSVs are opened. The conductive via may be closed off by a solderablelayer of nickel and palladium.

While the stress caused by the TSVs may result in large keep-out zonesfor three-dimensional integrated circuits (ICs), recent studies of TSVplacements have resulted in stress-aware layouts to help IC transistorsto benefit from the enhanced carrier mobility in the stress zones. Forinstance, a study by Yang et al., based upon mobility dependence onstress and orientation between FET channel and TSV, showed how theoptimum placement of TSVs can help improve the majority charge carriermobility and thus result in improved transistor performance (see Yang,Jae-Seok, et al., “TSV stress aware timing analysis with applications to3D-IC layout optimization”, Proceedings of the 47^(th) Design AutomationConference; ACM, Jun. 13-18, 2010, pp. 803-806).

SUMMARY

The intrinsic resistance of a field effect transistor (FET) is criticalfor performance. Decreasing the intrinsic resistance, usually theon-resistance of the channel between source and drain of a field effecttransistor, increases the transistor efficiency. Since it is known thatlocalized stresses near a transistor may result in improved electricalperformance by enhancing majority carrier mobility, applicants realizedthat numerous semiconductor products could be improved if a—preferablylow cost—method could be found to create such localized stress in allplaces of the product, where field effect transistors operate.

Applicants solved the problem of creating an intrinsic strain near anFET in a semiconductor chip and thus an increased mobility of the FETmajority carrier in the gate channel, when they discovered a techniqueof using the focused energy of an infrared stealth laser to form opticaldamage by multi-photon absorption in a location determined by theposition of the laser focus. The multi-photon absorption produces aregion of amorphous poly-semiconductor near an FET.

By moving the focused laser parallel to the chip surface, a zone ofamorphous semiconductor is created. The amorphous poly-semiconductorcreates a permanent intrinsic strain in the single-crystalline latticenear the FET structure. The strain in turn increases the mobility of themajority carrier in the gate channel of the FET.

The concept of the solution is the use of a focused infrared laser lightmoving along a direction to create at the depth of the focus an embeddedprecise layer of amorphous poly-semiconductor, which permanentlystresses the single-crystalline bulk semiconductor and thus increasesthe majority carrier mobility in the channel of a field effecttransistor.

In the process flow, a wafer of single-crystalline semiconductormaterial such as silicon is provided; the wafer has a surface andincludes a plurality of chips with field-effect transistors andintegrated circuitry; the circuitry extends to a first depth from thesurface. In addition, an infrared (IR) laser is selected so that itswavelength can be focused to a second depth greater than the first depthand allows a high percentage of the focused energy to be absorbed by thesingle-crystalline semiconductor lattice without ablation. The preferredwavelength range for the operation is between 900 nm and 1000 nm,allowing an integral transmittance between about 50% and 70%. Theabsorbed energy can then transform the single-crystalline semiconductorlattice into an amorphous polycrystalline region with high density ofdislocations.

After focusing the IR laser to the second depth, where the opticaldamage by multi-photon absorption creates modification of thesingle-crystalline semiconductor into polycrystalline material with ahigh density of dislocations, the focused beam is moved parallel to thesurface across the wafer. The moving local multi-photon absorption atthe second depth forms a zone of the polycrystalline semiconductor.Zones of various extension may be created. The movement may be repeateduntil a polycrystalline zone of about 30 μm height is created. Thepolycrystalline zone creates an intrinsic permanent strain in thesingle-crystalline lattice near the FET structures, which in turnresults in increased mobility of the majority device carriers and thus amore efficient FET performance, for instance by lowering the R_(DSon)resistance.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a cross section of portion of a semiconductor chip with theintegrated circuit zone close to the chip surface and the embedded zoneof amorphous polysilicon for creating strain in the single-crystallattice.

FIG. 2A is a schematic representation of the effect of stresses in annMOS field effect transistor: Tensile stresses enhance electron mobilityin the gate channel.

FIG. 2B is a schematic representation of the effect of stresses in apMOS field effect transistor: Compressive stresses enhance hole mobilityin the gate channel.

FIG. 3 illustrates the methodology of moving the focus of an infraredlaser parallel to the surface of a single-crystalline semiconductorchip, creating a zone of amorphous semiconductor.

FIG. 4 shows the diagram of a process flow for using focused infraredlaser light to create a zone of amorphous polysilicon embedded insingle-crystal silicon.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 1 illustrates as an exemplary embodiment of the invention thecrystal alteration of a portion of a chip made of a single-crystallinesemiconductor such as silicon; the chip portion is generally designated100. Other bulk semiconductors include silicon germanium, galliumnitride, gallium arsenide, and any other compound used in fabrication ofsemiconductor devices. Chip 100 has a first surface 100 a, a secondsurface 100 b, and a thickness 101. In preferred embodiments, thickness101 is in the range from about 70 μm to 150 μm (but may be thinner orthicker).

Close to first surface 100 a is a zone with transistors and circuitry.This integrated circuit zone is referred to herein as first zone; it hasa first depth 102 from first surface 100 a. In exemplary FIG. 1, firstdepth 102 is between about 6 μm and 12 μm dependent on the number ofmetallization levels employed. In preferred embodiments, the first zoneincludes one or more field effect transistors (FETs) made according toMOS technology. The FETs may be nMOS or pMOS devices dependent on theconductivity type and the majority carrier of the bulk semiconductor.

FIG. 1 illustrates a second zone 110 of polycrystalline semiconductorwith a high density of dislocations. In the exemplary embodiment of FIG.1, second zone 110 has a height 111 of about 30 μm; in otherembodiments, the height may be thicker or thinner. Second zone 110further has borderlines 110 a and 110 b, which are substantially planarand parallel to chip surfaces 100 a and 100 b. The middle line of secondzone 110 is spaced by a distance 112 from the chip surface 110 a; in theexample of FIG. 1, distance 112 is between about 30 μm and 50 μm; inother devices, it may be smaller or greater. In some devices borderline110 a may reach close to the borderline of the circuitry zone (firstzone).

As described by the method below, the polycrystalline semiconductor ofzone 110 is created from the single-crystalline bulk semiconductor bythe optical damage caused in multi-photon absorption of the energy of afocused infrared laser, which has been directed towards, and is movingparallel to, the chip surface 100 a. The amorphous poly-semiconductorcreates a permanent intrinsic strain in the single-crystalline latticenear the zone of integrated circuitry with the FET structures. Thestrain, in turn, affects the mobility of the majority carriers in thegate channels of the FETs.

The strain of a lattice multiplied by the modulus of the materialresults in the stress in the lattice (mechanical stress is measured inpascals, Pa). Since lattice stress leads to splitting of the conductionband, the effective mass of a carrier can be altered; this effectresults in changes of the carrier mobility. If the goal is to improvethe carrier mobility, semiconductor devices of pMOS and nMOStechnologies require different stress types, since the majority carriersare different; in nMOS devices, electrons are majority carriers, in pMOSdevices, holes are the majority carriers.

FIGS. 2A and 2B summarize the stress types necessary to improve majoritycarrier mobility in field effect transistors (FETs), schematicallydepicted to emphasize the channel between source and drain. As FIG. 2Ashows, for an nMOS FET with electrons as majority carriers, tensilestress in the x-direction between source and drain can increase theelectron mobility in the channel between source and drain. FIG. 2Bdepicts the corresponding situation for a pMOS FET; with holes asmajority carriers, compressive stress in the x-direction between sourceand drain can increase the hole mobility in the channel between sourceand drain. In either case, increased carrier mobility is proportional toincreased carrier speed and thus improved FET performance.

Another embodiment is a method for creating the stresses in thesemiconductor lattice to improve carrier mobility and thus theperformance of transistors. The method is illustrated in FIG. 3 andsummarized in FIG. 4. The method starts by providing a wafer 300 of asingle-crystalline semiconductor (process 401). The wafer has a surface300 a and a plurality of device chips. The wafer has completed thosefront-end processes, which result in fabrication of field effecttransistors (FETs) and circuitry in a zone of depth 302 from surface 300a. It should be noted that in FIG. 3, wafer 300 is shown having itsfinal thickness 301 after the process of back-grinding; yet forpractical reasons, the laser process to be described is preferablyexecuted while the wafer still has its original thickness beforeback-grinding.

In process 402, an infrared (IR) laser is provided, which is suitablefor stealth technology, also referred to as Mahoh technology. Suitablelasers are commercially available from a number of companies in theU.S., Japan, and other sources; a few of these companies are Hamamatsu,Disco, and Accretech. In the so-called stealth methodology, a laser isselected for its light operating according to a plot of InternalTransmittance (in %) as a function of the Wavelength (in nm). At IRwavelengths shorter than about 800 nm, the laser energy is high enoughto be used for ablating an object, so that the transmittance isnegligible (about 0%). This wavelength regime is often referred to aslaser dicing. At wavelengths longer than about 1100 nm, the laser energyis weak enough to be transmitted through the object, so that thetransmittance is about 100%. The wavelength regime is often referred toas stealth dicing.

As an example, in stealth technology, or Mahoh technology, the IRwavelength may be between 900 nm and 1000 nm, and the transmittance isin the range between 30% and 70%, and preferably about 50%. For themethod illustrated in FIG. 3, the IR light is designated 350 and thefocusing lens 351. An exemplary IR laser engine may produce 1.2 W pulsedpower so that at the focal area the semiconductor bulk experiencesinternal modification by optical damage caused by multi-photonabsorption. The focal area may be fixed to a typical size of about 15 μmdiameter. The depth 312 of the focal area can be controlled working fromthe bottom of the semiconductor wafer up; in FIG. 3, the wafer ofthickness 301 has the bottom at the wafer surface opposite surface 300 awith the circuitry and transistors in first zone 302. The transformationof the single-crystalline semiconductor material into polycrystallinesemiconductor with high density of dislocations occurs within secondzone 311 and can be controlled by laser power, feed rate, andwavelength. For its effect on FETs and circuitry in first zone 302, theproximity of second zone 311 relative to first zone 302 may reach fromjust a few micrometers to about 50 μm.

As described, the IR light 350 of the laser falls into a range of wavelengths, which can readily be absorbed by the semiconductorlattice-under-discussion (preferably monocrystalline silicon). Inprocess 403, a lens 351 focuses the IR light to a focal point, which isspaced from surface 300 a with the FETs. For the example embodiment ofFIG. 1, distance 312 may be in the 30 μm to 50 μm range. The energy ofthe laser light is absorbed by the single-crystalline semiconductor inso-called multi-photon absorption, which disturbs the singlecrystallinity of the lattice so that the resulting optical damage andenergy absorption morphs the single-crystalline semiconductor into apolycrystalline and amorphous configuration within a zone of width 311.In the example of FIG. 1, width 311 is about 30 μm wide. The borders ofsecond zone 311 are parallel to the wafer surface 300 a andapproximately planar. Zone 311 may be subdivided into sections withlateral dimensions smaller than the length of device chip. The highdensity of dislocations in the polycrystalline semiconductor exertsstress on the single-crystalline lattice of the semiconductor betweenzones 311 and 302. As mentioned above, this stress enhances the mobilityof majority carriers in FETs positioned in suitable orientation.

In process 404, the focused infrared laser beam is moved parallel to thewafer surface 300 a across wafer 300. This movement extends zone 311 ofpolycrystalline semiconductor in the direction parallel to surface 300a. For some devices, the movement thus the polycrystalline extension maybe short, for other devices, however, the movement may extend across thewhole wafer so that the polycrystalline zone extends across the wholelength of each chip. In either case, the height of the polycrystallinezone is approximately 30 μm.

The laser movement may be repeated several times to widen the area ofthe polycrystalline zone (second zone), until the whole area of activecircuitry is paralleled by a zone of polycrystalline semiconductor withan area sized to equal the circuitry area. The borders of the secondzone are approximately planar and parallel to the wafer surface 300 a.

After the second zone of polycrystalline semiconductor is created, adicing process singulates wafer 300 into discrete device chips. Eachchip includes a zone of polycrystalline semiconductor embedded in thesingle-crystalline bulk semiconductor.

While this invention has been described in reference to illustrativeembodiments, this description is not intended to be construed in alimiting sense. Various modifications and combinations of theillustrative embodiments, as well as other embodiments of the invention,will be apparent to persons skilled in the art upon reference to thedescription. As an example, the invention applies to any semiconductormaterial, including silicon, silicon germanium, gallium arsenide,gallium nitride, or any other semiconductor or compound material used inmanufacturing.

As another example, the invention applies to any zone of polycrystallinesemiconductor embedded in single-crystalline semiconductor, regardlessof the geometries of the second zone (such as lateral dimensions,thickness, and planarity), the degree of poly-crystallinity, and theposition of the second zone relative to the first zone of circuitry.

As another example, the semiconductor chip may be free of anencapsulation, or it may be in an additional package.

It is therefore intended that the appended claims encompass any suchmodifications or embodiments.

We claim:
 1. A semiconductor device comprising: a semiconductor dieincluding a surface, a first zone and a second zone within thesemiconductor die; the first zone extending to a first depth from thesurface, the first zone including field effect transistors; and thesecond zone at a second depth, which is greater than the first depth,the second zone including a different crystalline structure than that ofthe first zone, wherein the second zone extends across two opposite sidesurfaces of the semiconductor die, the two opposite side surfaces beingvertical to a plane parallel to the surface.
 2. The semiconductor deviceof claim 1, wherein the second zone is aligned with the field effecttransistors in a vertical direction, the vertical direction beingperpendicular to a plane parallel to the surface.
 3. The semiconductordevice of claim 1, wherein the first zone includes a single-crystallinesemiconductor.
 4. The semiconductor device of claim 1, wherein thesecond zone includes a polycrystalline semiconductor.
 5. Thesemiconductor device of claim 4, wherein the polycrystallinesemiconductor is created in response to a laser.
 6. The semiconductordevice of claim 1, wherein the first zone is parallel to the surface. 7.The semiconductor device of claim 1, wherein the semiconductor die is ina package, the package being part of the semiconductor device.
 8. Thesemiconductor device of claim 1, wherein the first depth is betweenabout 6 μm and 12 μm.
 9. The semiconductor device of claim 1, whereinthe second depth is between 6 μm and 50 μm.
 10. The semiconductor deviceof claim 1, wherein the second zone includes a side with a length acrossa plane parallel to the surface.
 11. A semiconductor device comprising:a semiconductor die including a surface, a first zone of polycrystallinesemiconductor parallel to the surface, wherein the first zone includes aheight, a length and a width; wherein the first zone extends across twoopposite side surfaces of the semiconductor die, the two opposite sidesurfaces being vertical to a plane parallel to the surface; and apackage associated with the semiconductor die.
 12. The semiconductordevice of claim 11, further comprising a second zone extending to afirst depth from the surface, the first zone including field effecttransistors and circuitry.
 13. The semiconductor device of claim 11,wherein the first zone is below the second zone from a cross-sectionalview of the semiconductor die.
 14. The semiconductor device of claim 12,wherein the second zone includes single-crystalline semiconductor. 15.The semiconductor device of claim 11, wherein first zone ofpolycrystalline semiconductor is created in response to an exposure toan infra-red laser beam.
 16. The semiconductor device of claim 11,wherein the height is about 30 μm.
 17. The semiconductor device of claim11, wherein the first zone includes a side with a length across a planeparallel to the chip surface.